SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA75A/QCB75A40/60
TRANSISTOR MODULE
UL;E76102
M
Maximum Ratings
Tj25 unless otherwise specified
Electrical Characteristics
Symbol
Item
Conditions
Ratings
QCA75A40
QCB75A40
QCA75A60
QCB75A60
Unit
V
CBO
Collector-Base Voltage
400
600
V
V
CEX
Collector-Emitter Voltage
V
BE
-2V
400
600
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
pw1ms
75
150
A
-I
C
Reverse Collector Current
75
A
I
B
Base Current
4.5
A
P
T
Total power dissipation
T
C
25
350
W
T
j
Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
QCA75A
QCB75A
Mounting
M6
Terminal
M5
Mounting
M5
Terminal
M4
Recommended Value 2.5-3.9
25-40
4.7(48)
Recommended Value 1.5-2.5
15-25
2.7(28)
Recommended Value 1.5-2.5
15-25
2.7(28)
Recommended Value 1.0-1.4
10-14
1.5(15)
N
m
fB
Mass
QCA75A/QCB75A
Typical Value
240/195
g
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
1.0
300
75
100
2.0
2.5
2.0
12.0
3.0
1.4
0.35/1.3
Unit
I
CBO
Collector Cut-off Current
V
CB
V
CBO
mA
I
EBO
Emitter Cut-off Current
V
EB
V
EBO
mA
300
V
CEO
SUS
Collector Emitter
Sustaning Voltage
QCA75A40
QCB75A40
QCA75A60
QCB75A60
QCA75A40
QCB75A40
QCA75A60
QCB75A60
Ic
1A
V
450
400
V
CEX
SUS
Ic
15AI
B2
-5A
V
600
h
FE
DC Current Gain
Ic
75AV
CE
2V/5V
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic
75AI
B
1A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
75AI
B
1A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc
300VIc75A
I
B1
1AI
B2
-1A
-Ic75A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance (junction to case)
94max
34max
31max
13
14.5
6.5mm
8
3
2
20
C2E1
E2
E2B2
E1B1
C1
20
27
7
3M5
80
26.5
110TAB
12 8
8 8
8 12
7
6.5
4.5
4.5
6.5
26.5
94max
800.2
8
2
11
13
35max
10 10
10
13
3
10
2
2
C
CE
E
6
25
1
8
32max
B2
B1
3
3
3
13
13
13
13
8
5M4
C1
B1
E1
C2E1
B2
E2
E2
C1
B1
C2E1
B2
E2
QCA
QCB
QCA75A and QCB75A are dual Darlington power
transistor modules which have series-connected high speed,
high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode.
I
C
75A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF
, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA75A/QCB75A40/60
V
CE
5V
V
CE
2V
Tj125
Tj25
Typical
D.C. Current Gain
Collector Current IcA
DC Current Gain h
FE
V
CE
V
BE
Ic55A
Tj25
Typical
Ic75A
Ic35A
Ic35A
Ic55A
Ic75A
Saturation Characteristics
Base Current I
B
A
-
Collector-Emitter Voltage V
V
Base-Emitter Voltage V
BE
V
10ms
100
s
500
s
1m
s
P
uls
e W
id
e
IS
/B
L
im
ite
d
P
T
Limited
QCA75
A60
QCB75
A60
Tc25
Non-Repetitive
QCA75
A40
QCB75
A40
Forward Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Tj125
QCA75A40
QCB75A40
QCA75A60
QCB75A60
IB2-2A
IB2-5A
IB2-2A
IB2-5A
Collector-Emitter Voltage V
CE
V
Reverse Bias Safe Operating Area
Collector Current Ic
A
Collector Current Derating Factor
Case Temperature
Derating Factor
%
IS/B L
imited
P
T
Lim
ited
=
Maximum
Forward Voltage of Free Wheeling Diode
Emitter-Collector Voltage V
ECO
V
Collector Reverse Current -Ic
A
ts
tf
ton
V
CC
300V
I
B1
1A
I
B2
-1A
Tj25
Typical
Collector Current Vs Switching Time
Collector Current IcA
Switching Time
t
on
t
f ts
s
50msec50sec
100sec50msec
Max
Junction to case
Maximum Transient Thermal Impedance
Characteristics
Time
t
sec
-
-
Transient Thermal Impedance
j-c
/
W
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